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STMicroelectronics recently stated in a statement that STMicroelectronics will double the number of silicon carbide (SiC) wafers purchased from Cree in the next few years.This news immediately attracted everyone's attention, but also because the current market demand for chips has increased. The USB car charger Argos, car charger for Samsung s20, and double car charger adapter are not stable; see how DAMAVO controls the risks.
This statement is significant because of the growing interest in the use of SiC diodes and MOSFETs (Metal Oxide Semiconductor Field Effect Transistors). Some analysts predict that by 2025, the market will reach $3 billion. By 2026, GaN (gallium nitride) devices will grow by 50%, and the global market will be approximately US$35.8 billion.
These diodes and MOSFETs are considered vital to the fast-growing automotive parts and industrial customers. STMicroelectronics recently stated that it will become a supplier of electronic products for the alliance's electric car chargers.
STMicroelectronics, headquartered in Geneva, achieved $9.6 billion in revenue in 2018 and has more than 100,000 customers worldwide. It produces various electronic products and semiconductors.
Cree said that SiC provides better performance, which is essential for electric vehicles and industrial products for solar, energy storage and UPS systems. The mission of the automotive industry is to find higher efficiency for electric vehicles that require longer distances and faster charging. For the industrial sector, SiC modules allow the use of smaller, lighter and more cost-effective inverters to convert energy more efficiently.
SiC is believed to be faster, tougher, and more efficient than pure silicon. It can withstand higher voltage and temperature than silicon.
The difference between GaN charger and ordinary charger
Gallium nitride is an inorganic substance with the chemical formula GaN, which is a compound of nitrogen and gallium. It is a direct bandgap semiconductor and has been commonly used in light-emitting diodes since 1990. This compound has a wurtzite-like structure and high hardness. The energy gap of gallium nitride is very wide, 3.4 electron volts, which can be used in high-power, high-speed optoelectronic components. For example, gallium nitride can be used in violet laser diodes, and can be used in non-linear semiconductor-pumped solid-state lasers ( Under the condition of Diode-pumped solid-state laser), violet light (405nm) laser is generated.
GaN can withstand a higher voltage than silicon, so it has better conductivity. Under the same volume, the charger using GaN technology has higher output efficiency than ordinary chargers. Compared with other semiconductors, GaN has much higher breakdown field strength, saturated electron migration speed and thermal conductivity. This also shows that GaN is more suitable for high power and high power than silicon materials. Frequency power devices.
GaN is called the third-generation semiconductor material. Compared with silicon, its performance is doubled, and it is more suitable for high-power devices than silicon, with smaller volume and greater power density. The frequency of GaN chips is much higher than that of silicon, which effectively reduces the volume of internal transformers and other components. At the same time, the excellent heat dissipation performance also enables the layout of internal components to be more precise, which finally perfectly solves the contradiction between charging rate and portability.
Once operational, it will undoubtedly stimulate consumer purchase, for automotive parts suppliers is a breakthrough technology, improve product quality, sufficient to enable them to exceed their competitors for the USB charger is also a quality leap.
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